| PART |
Description |
Maker |
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
| CY7C25652KV18-450BZC CY7C25652KV18-450BZXC CY7C256 |
72-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C2263KV18-450BZXI CY7C2263KV18-550BZXI CY7C2265 |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST
36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆
36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441 |
18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44165362F5-E75-EQ1 UPD44165082 UPD44165082F5-E5 |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
